S vacancies in 2D SnS2 accelerating hydrogen evolution reaction

Precise manipulation of atomic defects is essential for modulating the intrinsic properties two-dimensional (2D) materials. In this study, sulfur (S) atoms are accurately knocked out in 2D basal plane pure tin disulfide (SnS2). By varying annealing temperatures (250–350°C), SnS2 with different S vacancy concentrations (Vs?SnS2) can be obtained. When annealed at 350°C 5 h, vacancies forms single atom and double could reach up to 30.5%. The Vs?SnS2 tested microelectrocatalytic hydrogen evolution reaction (HER). 30.5% generates superior catalytic performance, a Tafel slope 74 mV dec?1 onset potential 141 mV. mechanism has been proposed. First, computation confirms that absence prompts surface charge modulation enhances electronic conductivity. addition, under-coordinated Sn adjacent introduce lattice distortion density redistribution, which beneficial binding HER. short, accurate knockout specific by controlling temperature promising strategy explore structure-dependent various